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RJK5014DPK

Renesas Technology
Part Number RJK5014DPK
Manufacturer Renesas Technology
Description Silicon N Channel MOS FET High Speed Power Switching
Published Jul 23, 2010
Detailed Description www.DataSheet4U.com RJK5014DPK Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low ...
Datasheet PDF File RJK5014DPK PDF File

RJK5014DPK
RJK5014DPK

Overview
www.
DataSheet4U.
com RJK5014DPK Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching REJ03G1458-0200 Rev.
2.
00 Oct 20, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D G 1.
Gate 2.
Drain (Flange) 3.
Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 μs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 500 ±30 19 38 19 38 5 1.
3 150 0.
833 150 –55 to +150 Unit V V A A A A A mJ W °C/W °C °C REJ03G1458-0200 Rev.
2.
00 Oct 20, 2009 Page 1 of 6 RJK5014DPK ww...


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