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RJK5030DPD

Part Number	RJK5030DPD
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET High Speed Power Switching
Published	Jul 23, 2010
Detailed Description	Preliminary www.DataSheet4U.com Datasheet RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching Features  Lo...
Datasheet	RJK5030DPD PDF File

Overview

Preliminary www.
DataSheet4U.
com Datasheet RJK5030DPD Silicon N Channel MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 1.
3  typ.
(at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching REJ03G1913-0100 Rev.
1.
00 Apr 12, 2010 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1.
2.
3.
4.
Gate Drain Source Drain D G 12 3 S Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.
Pulse width limited by safe operating area.
2.
Value at Tc = 25C 3.
STch = 25C, Tch  150C Symbol VDSS VGSS ID ID (pulse) Note3 IAP Pch Note 2 ch-c Tch Tstg Note1 Value 500 30 5 20 5 41.
7 3.
0 150 –55 to +150 Unit V V A A A W C/W C C REJ03G1913-0100 Rev.
1.
00 Apr 12, 2010 Page 1 of 5 RJK5030DPD Preliminary www.
DataSheet4U.
com Electrical Characteristics (Ta = ...

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