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RJL6012DPE

Part Number	RJL6012DPE
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET High Speed Power Switching
Published	Jul 23, 2010
Detailed Description	www.DataSheet4U.com RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast reco...
Datasheet	RJL6012DPE PDF File

Overview

www.
DataSheet4U.
com RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1750-0100 Rev.
1.
00 Oct 26, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1.
Gate 2.
Drain 3.
Source 4.
Drain 1 G 2 3 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
...

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RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching - Renesas Technology

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