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B100NF04L

STMicroelectronics
Part Number B100NF04L
Manufacturer STMicroelectronics
Description STB100NF04L
Published Jul 24, 2010
Detailed Description www.DataSheet4U.com N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET TYPE STB100NF04L s s s s STB100NF0...
Datasheet PDF File B100NF04L PDF File

B100NF04L
B100NF04L

Overview
www.
DataSheet4U.
com N-CHANNEL 40V - 0.
0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET TYPE STB100NF04L s s s s STB100NF04L VDSS 40 V RDS(on) <0.
0042Ω ID 100 A TYPICAL RDS(on) = 0.
0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS D2PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM(•) Ptot dv/dt (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max.
Operating Junction Temperature Value 40 40 ± 16 100 70 400 300 2 3.
6 1.
4 -65 to 175 175 (1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, T j ≤ T JMAX (2) Starting T j = 25 oC, IAR = 50A, V DD= 30V Unit V V V A A A W W/°C V/ns J °C °C EAS (2) Tstg Tj (•) Pulse width limited by safe operating area.
(*) Current Limited by package February 2002 .
1/9 www.
DataSheet4U.
com STB100NF04L THERMAL DATA Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.
5 62.
5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body...


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