DatasheetsPDF.com

RB162L-60

Rohm
Part Number RB162L-60
Manufacturer Rohm
Description Schottky Barrier Diode
Published Jul 27, 2010
Detailed Description www.DataSheet4U.com Schottky Barrier Diode RB162L-60 Applications General rectification Dimensions (Unit : mm) Land ...
Datasheet PDF File RB162L-60 PDF File

RB162L-60
RB162L-60


Overview
www.
DataSheet4U.
com Schottky Barrier Diode RB162L-60 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.
0 2.
0 Features 1) Small power mold type.
(PMDS) 2) High switching speed 3) Low forward voltage Construction Silicon epitaxial planer PMDS Structure Taping dimensions (Unit : mm) Absolute maximum ratings (Tl=25 C) Parameter Symbol Repetitive peak reverse voltage VRM Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature VR Io IFSM Tj Tstg Conditions D0.
5 Direct voltage Glass epoxy substrate mounted R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C Limits 60 60 1.
0 20 150 -40 to +150 4.
2 Unit V V A A C C Electrical characteristics (Tj=25 C) Parameter Symbol Forward voltage VF Reverse current IR Conditions IF=1.
0A VR=60V Min.
- Typ.
0.
54 4 Max.
0.
65 100 Unit V μA www.
rohm.
com ©2010 ROHM Co.
, Ltd.
All rights reserved.
1/3 2010.
02 - Rev.
A RB162L-60 Electrical characteristics curves 1 Tj=150 C REVERSE CURRENT : IR(A) 10000 100000   www.
DataSheet4U.
com Data Sheet 1000 Tj=150 C Tj=125 C f=1MHz CAPACITANCE BETWEEN TERMINALS : Ct(pF) 100 FORWARD CURRENT : IF(A) Tj=125 C 1000 Tj=125 C 100 Tj=25 C 0.
1 Tj=25 C Tj=25 C 10 10 1 0.
01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 0.
1 0 10 20 30 40 50 60 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 550 FORWARD VOLTAGE : VF(mV) 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Tj=25 C IF=1.
0A n=20pcs Tj=25 C VR=60V n=20pcs 200 190 180 170 160 150 AVE : 168.
0pF 140 130 120 110 Tj=25 C f=1MHz VR=0V n=10pcs 540 530 520 510 500 490 480 VF DISPERSION MAP AVE : 515.
2mV REVERSE CURRENT : IR(A) 10 AVE : 6.
0 A 1 IR DISPERSION MAP 100 Ct DISPERSION MAP 120 Ifsm 1cyc RESERVE RECOVERY TIME : trr(ns) 30 Tj=25 C IF=0.
1A IR=0.
1A Irr=0.
1*IR n...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)