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BTB08-800CW3G

ON Semiconductor
Part Number BTB08-800CW3G
Manufacturer ON Semiconductor
Description Triacs Silicon Bidirectional Thyristors
Published Aug 1, 2010
Detailed Description www.DataSheet4U.com BTB08-600CW3G, BTB08-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance ...
Datasheet PDF File BTB08-800CW3G PDF File

BTB08-800CW3G
BTB08-800CW3G

Overview
www.
DataSheet4U.
com BTB08-600CW3G, BTB08-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required.
Features http://onsemi.
com •ăBlocking Voltage to 800 V •ăOn‐State Current Rating of 8 A RMS at 25°C •ăUniform Gate Trigger Currents in Three Quadrants •ăHigh Immunity to dV/dt - 1500 V/ms minimum at 125°C •ăMinimizes Snubber Networks for Protection •ăIndustry Standard TO‐220AB Package •ăHigh Commutating dI/dt - 3.
0 A/ms minimum at 125°C •ăThese are Pb-Free Devices MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB08-600CW3G BTB08-800CW3G On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non‐Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non-Repetitive Surge Peak Off-State Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) Peak Gate Power (Pulse Width ≤ 1.
0 ms, TC = 80°C) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 8.
0 90 A A Value Unit V TRIACS 8 AMPERES RMS 600 thru 800 VOLTS MT2 G 4 MT1 MARKING DIAGRAM 1 2 3 TO-220AB CASE 221A STYLE 4 BTB08-xCWG AYWW I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg 36 VDSM/VRSM +100 4.
0 20 1.
0 -ā40 to +125 -ā40 to +150 A2sec V A W W °C °C x A Y WW G = 6 or 8 = Assembly Location = Year = Work Week = Pb-Free Package PIN ASSIGNMENT 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
VDRM and VRRM for all types can be applied on a...


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