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BUL642D2

Part Number	BUL642D2
Manufacturer	ON Semiconductor
Description	High Gain Bipolar NPN Transistor
Published	Aug 1, 2010
Detailed Description	www.DataSheet4U.com BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−i...
Datasheet	BUL642D2 PDF File

Overview

www.
DataSheet4U.
com BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP).
Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application.
A new development process brings avalanche energy capability, making the device extremely rugged.
Features http://onsemi.
com 3 AMPERES 825 VOLTS 75 WATTS POWER TRANSISTOR • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 300 mA/5 V • Extremely Low Storage Time Min/Max Guarantees Due to the...

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BUL642D2 High Gain Bipolar NPN Transistor - ON Semiconductor

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