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PDB-V114

Advanced Photonix
Part Number PDB-V114
Manufacturer Advanced Photonix
Description Blue Enhanced Photovoltaic Silicon Photodiode
Published Aug 4, 2010
Detailed Description Blue Enhanced Photovoltaic Silicon Photodiode www.DataSheet4U.com PDB-V114 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSI...
Datasheet PDF File PDB-V114 PDF File

PDB-V114
PDB-V114


Overview
Blue Enhanced Photovoltaic Silicon Photodiode www.
DataSheet4U.
com PDB-V114 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] 45° Ø.
362 [9.
19] Ø.
357 [9.
07] Ø.
330 [8.
38] Ø.
320 [8.
13] .
168 [4.
27] .
075 [1.
91] 2X Ø.
018 [0.
46] ANODE 63° VIEWING Ø.
255 [6.
48] ANGLE Ø.
245 [6.
22] .
200 [5.
08] CATHODE .
010 [0.
25] MAX GLASS ABOVE CAP TOP EDGE 2X .
50 [12.
7] MIN CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] .
236 [5.
99] .
136 [3.
45] .
124 [3.
15] ACTIVE AREA TO-46 PACKAGE TO-5 PACKAGE .
224 [5.
69] ACTIVE AREA FEATURES • • • • Low noise Blue enhanced High shunt resistance High response DESCRIPTION The PDB-V114 is a blue enhanced PIN silicon photodiode in a photovoltaic mode, packaged in a TO-46 package.
APPLICATIONS • Instrumentation • Industrial • Medical ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED VBR TSTG TO TS Reverse Voltage Storage Temperature Operating Temperature Soldering Temperature* -55 -40 75 +150 +125 +240 V °C °C °C Responsivity (A/W) SPECTRAL RESPONSE 0.
70 0.
60 0.
50 0.
40 0.
30 0.
20 0.
10 0.
00 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) 1150 SYMBOL PARAMETER MIN MAX UNITS * 1/16 inch from case for 3 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ISC ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Short Circuit Current Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS H = 100 fc, 2850 K VR = 10 V VR = 10 mV VR = 0 V, f = 1 MHz Spot Scan l= 450 nm V, VR = 0 V I = 10 μA VR = 0V @ l=Peak RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V MIN 200 0.
2 350 0.
15 30 TYP 230 335 1 2000 0.
17 50 2X10-14 190 13 MAX 550 UNITS μA pA GW pF nm A/W V W/ √ Hz nS 1100 **Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable.
However, no responsibility is assumed ...



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