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MRF8S26120HR3

Part Number	MRF8S26120HR3
Manufacturer	Motorola
Description	RF Power Field Effect Transistor
Published	Aug 14, 2010
Detailed Description	Freescale Semiconductor Technical Data Document Number: MRF8S26120H www.DataSheet4U.com Rev. 0, 6/2010 RF Power Field ...
Datasheet	MRF8S26120HR3 PDF File

Overview

Freescale Semiconductor Technical Data Document Number: MRF8S26120H www.
DataSheet4U.
com Rev.
0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 7.
5 dB @ 0.
01% Probability on CCDF.
Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 15.
5 15.
5 15.
6 ηD (%) 31.
5 31.
1 31.
1 Output PAR (dB) 6.
3 6.
3 6.
2 ACPR (dBc) --38.
0 --37.
3 --36.
7 MRF8S26120HR3 MRF8S26120HSR3 2620-2690 MHz, 28 W AVG.
, 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 135 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 110 Wat...

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