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T0512xH

STMicroelectronics
Part Number T0512xH
Manufacturer STMicroelectronics
Description STANDARD TRIACS
Published Aug 16, 2010
Detailed Description www.DataSheet4U.com ® T0510xH T0512xH STANDARD TRIACS FEATURES IT(RMS) = 5A VDRM = 400V to 800V High surge current ca...
Datasheet PDF File T0512xH PDF File

T0512xH
T0512xH


Overview
www.
DataSheet4U.
com ® T0510xH T0512xH STANDARD TRIACS FEATURES IT(RMS) = 5A VDRM = 400V to 800V High surge current capability A1 A2 G DESCRIPTION The T05xxxH series of triacs uses a high performance MESA GLASS technology.
These parts are intended for general purpose switching and phase control applications.
ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 1 A/µs.
IG = 500 mA Tc= 100 °C tp = 8.
3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.
5mm from case Value 5 45 40 8 10 50 - 40, + 150 - 40, + 125 260 °C °C A2s A/µs Unit A A TO220 non-insulated (Plastic) I2t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125°C 400 Voltage M 600 S 700 N 800 Unit V 1/5 www.
DataSheet4U.
com T0510xH / T0512xH THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Junction to ambient Junction to case for D.
C Junction to case for A.
C 360 ° conduction angle (F=50Hz) Parameter Value 60 5.
3 4 Unit °C/W °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.
3kΩ VD=VDRM IG = 500mA IT = 7.
1A dIG/dt = 3A/µs IT= 250 mA Gate open IG= 1.
2 IGT Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Quadrant I-II-III-IV I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MIN TYP Sensitivity 10 25 1.
5 0.
2 2 12 50 mA V V µs Unit IGM = 4 A (tp = 20 µs) IH * IL Tj= 25°C Tj= 25°C I-III-IV II MAX TYP TYP MAX MAX MAX MIN MIN 25 25 50 1.
65 5 1.
5 100 2 50 50 100 mA mA VTM * IDRM IRRM dV/dt * (dV/dt)c * ITM= 7.
1A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 2.
2 A/ms Tj= 25°C Tj= 25°C Tj= 110°C ...



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