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MTD6N20E

ON Semiconductor
Part Number MTD6N20E
Manufacturer ON Semiconductor
Description Power MOSFET
Published Aug 17, 2010
Detailed Description www.DataSheet4U.com MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET...
Datasheet PDF File MTD6N20E PDF File

MTD6N20E
MTD6N20E

Overview
www.
DataSheet4U.
com MTD6N20E Preferred Device Power MOSFET 6 Amps, 200 Volts N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features http://onsemi.
com 6 AMPERES, 200 VOLTS RDS(on) = 460 mW N−Channel D • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a • • • Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Pb−Free Package is Available* Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
0 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) Drain Current − Continuous − Continuous @ 100°C − Single Pulse (tp ≤ 10 ms) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 80 Vdc, VGS = 10 Vdc, IL = 6.
0 Apk, L = 3.
0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 200 200 ± 20 ± 40 6.
0 3.
8 18 50 0.
4 1.
75 −55 to 150 54 Unit Vdc Vdc Vdc Vpk Adc Apk W W/°C W °C mJ 1 2 3 1 2 3 Gate Drain Source Device Code = Year = Work Week = Pb−Free Package 4 DPAK CASE 369D STYLE 2 4 Drain YWW 6 N20E 1 2 3 1 Gate 2 Drain 3 Source 4 DPAK CASE 369C STYLE 2 G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) MARKING DIAGRAMS 4 Drain YWW 6 N20EG TJ, Tstg EAS RqJC RqJA RqJA 2.
50 100 71.
4 °C/W Maximum Temperature fo...


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