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N04Q1618C2B

Part Number	N04Q1618C2B
Manufacturer	AMI SEMICONDUCTOR
Description	4Mb Ultra-Low Power Asynchronous CMOS SRAM
Published	Aug 17, 2010
Detailed Description	AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX...
Datasheet	N04Q1618C2B PDF File

Overview

AMI Semiconductor, Inc.
ULP Memory Solutions 670 North McCarthy Blvd.
Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04Q1618C2B Advance Information www.
DataSheet4U.
com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI Semiconductor’s advanced CMOS technology to provide ultra-low active and standby power.
The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently.
The 4Mb SRAM is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices.
The unique page mode operation saves active operating power and the dual power supply rails allow very low voltage operation while maintaining 3V I/O capability.
The device can operate over a very wide temperature range of 0oC to +70oC for the lowest power and is also available in the industrial range of -40oC to +85oC.
The devices are available in standard BGA and TSOP packages.
The devices are also available as Known Good Die (KGD) for embedded package applications.
Features • Multiple Power Supply Ranges 1.
1V - 1.
3V 1.
65V - 1.
95V • Dual Vcc / VccQ Power Supplies 1.
2V Vcc with 3V VccQ 1.
8V Vcc with 3V VccQ • Very low standby current 50nA typical for 1.
2V operation • Very low operating current 400µA typical for 1.
2V operation at 1µs • Very low Page Mode operating current 80µA typical for 1.
2V operation at 1µs • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Automatic po...

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N04Q1618C2B 4Mb Ultra-Low Power Asynchronous CMOS SRAM - AMI SEMICONDUCTOR

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