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N04Q16YYC2B

Part Number	N04Q16YYC2B
Manufacturer	NanoAmp Solutions
Description	4Mb Ultra-Low Power Asynchronous CMOS SRAM
Published	Aug 17, 2010
Detailed Description	NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.n...
Datasheet	N04Q16YYC2B PDF File

Overview

NanoAmp Solutions, Inc.
670 North McCarthy Blvd.
Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.
nanoamp.
com N04Q16yyC2B Advance Information www.
DataSheet4U.
com 4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY Overview The N04Q16yyC2B are ultra-low power memory devices containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide ultra-low active and standby power.
The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.
Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently.
The 4Mb SRAM is optimized for the ultimate in low power and is suited for various applications where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held ...

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N04Q16YYC2B 4Mb Ultra-Low Power Asynchronous CMOS SRAM - NanoAmp Solutions

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