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BYV54HR

ST Microelectronics
Part Number BYV54HR
Manufacturer ST Microelectronics
Description Aerospace 40 A - 200 V fast recovery rectifier
Published Aug 19, 2010
Detailed Description www.DataSheet4U.com BYV54HR Aerospace 40 A - 200 V fast recovery rectifier Features ■ ■ ■ ■ ■ ■ Very small conduction ...
Datasheet PDF File BYV54HR PDF File

BYV54HR
BYV54HR


Overview
www.
DataSheet4U.
com BYV54HR Aerospace 40 A - 200 V fast recovery rectifier Features ■ ■ ■ ■ ■ ■ Very small conduction losses Negligible switching losses High surge current capability High avalanche energy capability Hermetic package Target radiation qualification: – 150 krad (Si) low dose rate – 1 Mrad high dose rate Package mass: 10 g ESCC qualified Figure 1.
Device configuration BYV54S200FSY1 BYV54S200FSYHRB 2 TO-254AA ■ ■ Description Packaged in a hermetic TO-254AA, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other aerospace applications.
The complete ESCC specification for this device is available from the European space agency web site.
ST guarantees full compliance of qualified parts with such ESCC detailed specifications.
Table 1.
Device summary(1) ESCC detailed Quality level specification 5103/031/05 Engineering model Flight part Terminal 1: Cathode Terminal 2: Anode Terminal 3: Anode 1 3 The case is not connected to any lead Order code BYV54S200FSY1 BYV54S200FSYHRB Lead finish Gold Solder dip EPPL - IF(AV) VRRM Tj(max) VF (max) 40 A Y 200 V 150 °C 1.
10 V 1.
Contact ST sales office for information about the specific conditions for products in die form and QML-Q versions.
July 2010 Doc ID 17416 Rev 1 1/8 www.
st.
com 8 www.
DataSheet4U.
com Characteristics BYV54HR 1 Characteristics Table 2.
Symbol Absolute maximum ratings Characteristic Forward surge current(1) Repetitive peak reverse voltage (2) (3) Value 400 200 40 60 Unit A V A A °C °C °C °C IFSM VRRM IO IF(RMS) TOP TJ TSTG TSOL Average output rectified current (50% duty cycle): Forward rms current Operating case temperature range Junction temperature Storage temperature range(4) (4) -55 to +150 +150 -55 to +150 +260 Soldering temperature(5) 1.
Sinusoidal pulse of 10 ms duration 2.
Pulsed, duration 5 ms, F = 50 Hz 3.
For Tcase > +99 °C, derate linearly to 0 A at +150°C.
4.
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