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BUK652R7-30C

NXP
Part Number BUK652R7-30C
Manufacturer NXP
Description N-channel TrenchMOS intermediate level FET
Published Aug 19, 2010
Detailed Description www.DataSheet4U.com BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 5 July 2010 Objective data sheet ...
Datasheet PDF File BUK652R7-30C PDF File

BUK652R7-30C
BUK652R7-30C

Overview
www.
DataSheet4U.
com BUK652R7-30C N-channel TrenchMOS intermediate level FET Rev.
01 — 5 July 2010 Objective data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V Automotive systems „ Electric and electro-hydraulic power ste...


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