DatasheetsPDF.com

STL17N3LLH6

ST Microelectronics
Part Number STL17N3LLH6
Manufacturer ST Microelectronics
Description N-Channel Power MOSFET
Published Aug 19, 2010
Detailed Description www.DataSheet4U.com STL17N3LLH6 N-channel 30 V, 0.0038 Ω , 17 A PowerFLATTM(3.3x3.3) STripFETTM VI DeepGATETM Power MOS...
Datasheet PDF File STL17N3LLH6 PDF File

STL17N3LLH6
STL17N3LLH6

Overview
www.
DataSheet4U.
com STL17N3LLH6 N-channel 30 V, 0.
0038 Ω , 17 A PowerFLATTM(3.
3x3.
3) STripFETTM VI DeepGATETM Power MOSFET Features Type STL17N3LLH6 VDSS 30 V RDS(on) max 0.
0045 Ω ID 17 A (1) 1.
The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Figure 1.
Internal schematic diagram PowerFLAT™ (3.
3 x 3.
3) Application ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved.
Table 1.
Device summary Marking 17N3L Package PowerFLAT™ (3.
3 x 3.
3) Packaging Tape and reel Order code STL17N3LLH6 July 2010 Doc ID 15535 Rev 2 1/10 www.
st.
com 10 www.
DataSheet4U.
com Contents STL17N3LLH6 Contents 1 2 3 4 5 Electrical ratings .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3 Electrical characteristics .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4 Test circuits .
6 Package mechanical data .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
7 Revision history .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
9 2/10 Doc ID 15535 Rev 2 www.
DataSheet4U.
com STL17N3LLH6 Electrical ratings 1 Electrical ratings Table 2.
Symbol VDS VGS ID(1) ID (1) IDM (2) (3) (1) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Total dissipation at TC = 25 °C Derating factor Value 30 ± 20 17 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)