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BYM26BGP

Gulf Semiconductor
Part Number BYM26BGP
Manufacturer Gulf Semiconductor
Description SINTERED GLASS JUNCTIONFAST SWITCHING PLASTIC RECTIFIER
Published Aug 26, 2010
Detailed Description BYM26AGP THRU BYM26EGP SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE：200V to 1000V CURRENT: 2.3A www...
Datasheet PDF File BYM26BGP PDF File

BYM26BGP
BYM26BGP

Overview
BYM26AGP THRU BYM26EGP SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE：200V to 1000V CURRENT: 2.
3A www.
DataSheet4U.
com FEATURE High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed 350°C /10sec/0.
375”lead length at 5 lbs tension Low leakage current Typical Ir<0.
1µA Excellent stability Guaranteed avalanche energy absorption capability DO-201AD MECHANICAL DATA Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity: color band denotes cathode Mounting position: any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated) SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage Vrrm Vrms Vdc BYM26 AGP 200 140 200 300 BYM26 BGP 400 280 400 500 BYM26 CGP 600 420 600 700 2.
3 45 2.
65 10 10.
0 150.
0 BYM26 DGP 800 560 800 900 BYM26 EGP 1000 700 1000 units V V V V A A V mJ Reverse avalanche breakdown voltage at IR = 0.
1 mA Maximum Average Forward Rectified Current 10mm lead length at Ta =55°C Peak Forward Surge Current 8.
3ms single half sine-wave superimposed on rated load Maximum Forward Voltage at rated Forward Current and 25°C non-repetitive peak reverse avalanche energy (Note 1) Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =125°C Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance Typical Thermal Resistance (Note 3) (Note 4) V(BR)R (min) If(av) Ifsm Vf Ersm Ir Trr Cj Rθja Tstg, Tj 1100 µA µA 75 nS pF 30 75.
0 20.
0 -65 to +175 Storage and Operating Junction Temperature °C /W °C Note: 1.
L = 120 mH; Tj = Tj max prior to surge; inductive load switched off 2.
Reverse Recovery Condition If =0.
5A, Ir =1.
0A, Irr =0.
25A 3.
Mea...


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