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SFP36N03

Part Number	SFP36N03
Manufacturer	Fairchild Semiconductor
Description	Advanced Power MOSFET
Published	Sep 11, 2010
Detailed Description	Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s ...
Datasheet	SFP36N03 PDF File

Overview

Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max.
) @ VDS = 30V s Lower RDS(ON) : 0.
012Ω (Typ.
) SFP36N03 BVDSS = 30 V RDS(on) = 0.
018Ω ID = 36 A TO-220 www.
DataSheet4U.
com 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8＂ from case for 5-seconds ② ① ① ③ ① Value 30 36 25.
3 144 ±20 775 36 9.
4 5.
5 94 0.
63 - 55 to +175 Units V A A V mJ A mJ V/ns W W/℃ ℃ 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ.
-0.
5 -Max.
1.
60 -62.
5 ℃/W Units Rev.
A1  2001 Fairchild Semiconductor Corporation SFP36N03 Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coeff.
Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(＂Miller＂) Charge Min.
Typ.
Max.
Units 30 1.
0 ---------------------------2.
5 100 -100 10 100 0.
018 μA Ω Ω V V/℃ V nA www.
DataSheet4U.
com N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250μA ID=250μA VGS=20V ...

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SFP36N03 Advanced Power MOSFET - Fairchild Semiconductor

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