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NJW3281G

ON Semiconductor
Part Number NJW3281G
Manufacturer ON Semiconductor
Description NPN-PNP Silicon Power Bipolar Transistors
Published Sep 12, 2010
Detailed Description NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are pow...
Datasheet PDF File NJW3281G PDF File

NJW3281G
NJW3281G

Overview
NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications.
Features • Exceptional Safe Operating Area • NPN/PNP Gain Matching within 10% from 50 mA to 5 A • Excellent Gain Linearity • High BVCEO • High Frequency • These Devices are Pb−Free and are RoHS Compliant Benefits • Reliable Performance at Higher Powers • Symmetrical Characteristics in Complementary Configurations • Accurate Reproduction of Input Signal • Greater Dynamic Range • High Amplifier Bandwidth Applications • High−End Consumer Audio Products ♦ Home Amplifiers ♦ Home Receivers • Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.
5 V Collector Current − Continuous Collector Current − Peak (Note 1) Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C VCEO VCBO VEBO VCEX IC ICM IB PD 250 250 5.
0 250 15 30 1.
6 200 1.
43 Unit Vdc Vdc Vdc Vdc Adc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −  65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.
625 °C/W Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1.
Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
© Semiconductor Components Industries, LLC, 2013 1 September, 2013 − Rev.
1 http://onsemi.
com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS PNP COLLECT...


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