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NTMFS4851N

ON Semiconductor
Part Number NTMFS4851N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Sep 19, 2010
Detailed Description www.DataSheet4U.com NTMFS4851N Power MOSFET Features 30 V, 66 A, Single N−Channel, SO−8FL • • • • • • • • • Low RDS(on...
Datasheet PDF File NTMFS4851N PDF File

NTMFS4851N
NTMFS4851N

Overview
www.
DataSheet4U.
com NTMFS4851N Power MOSFET Features 30 V, 66 A, Single N−Channel, SO−8FL • • • • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package These are Pb−Free Devices* Refer to Application Note AND8195/D CPU Power Delivery DC−DC Converters High Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxpkg TJ, TSTG IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±16 15 10.
8 2.
16 24.
3 17.
5 5.
67 9.
5 6.
9 0.
87 66 47.
8 41.
7 132 100 −55 to +150 41.
7 6 109 W A A °C A V/ns mJ NTMFS4851NT3G W A W A 1 http://onsemi.
com V(BR)DSS 30 V RDS(ON) MAX 5.
9 mW @ 10 V 8.
7 mW @ 4.
5 V ID MAX 66 A Applications D (5,6) Unit V V A S (1,2,3) W A N−CHANNEL MOSFET G (4) MARKING DIAGRAM D S S S G 4851N AYWWG G D D SO−8 FLAT LEAD CASE 488AA STYLE 1 D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Current limited by package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt ORDERING INFORMATION Device NTMFS4851NT1G Package SO−8FL (Pb−Free) SO−8FL (Pb−Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 27 Apk, L = 0.
3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C †For information on...


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