DatasheetsPDF.com

HC8050S

SHANTOU HUASHAN ELECTRONIC
Part Number HC8050S
Manufacturer SHANTOU HUASHAN ELECTRONIC
Description NPN SILICON TRANSISTOR
Published Sep 24, 2010
Detailed Description NPN S I L I C O N T RA N S I S T O R www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HC8050S █ APPLI...
Datasheet PDF File HC8050S PDF File

HC8050S
HC8050S

Overview
NPN S I L I C O N T RA N S I S T O R www.
DataSheet4U.
com Shantou Huashan Electronic Devices Co.
,Ltd.
HC8050S █ APPLICATIONS Audio Frequency Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— Storage Temperature ………………………… -55~150 ℃ Tj——Juncttion Temperature …………………………………150℃ P C —— Collector Dissipation ………………………………… 625W VCBO——Collector-Base Voltage ………………………………40V VCEO——Collector-Emitter Voltage……………………………20V V EB O —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current………………………………………500mA 1―Emitter，E 2―Collector， C 3―Base，B TO-92 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector Cut-off Current Emitter Cut-off Current Min Typ Max Unit Test Conditions ICBO IEBO HFE（2） 0.
1 0.
1 85 40 0.
6 0.
6 40 20 5 1.
2 0.
73 500 μA μA VCB=25V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA VCE=1V, IC=500mA HFE（1） DC Current Gain VCE(sat） Collector- Emitter Saturation Voltage VBE(sat) VBE(on) BVCBO BVCEO BVEBO Base- Emitter Saturation Voltage V V V V V V IC=500mA, IB=50mA IC=500mA,IB=50mA VCE=1V, IC=10mA IC=100μA，IE=0 IC=2mA，IB=0 IE=100μA，IC=0 Base-Emitter On Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage █ hFE Classification B 85—160 C 120—200 D 160—300 E 270—500 NPN S I L I C O N T RA N S I S T O R www.
DataSheet4U.
com Shantou Huashan Electronic Devices Co.
,Ltd.
HC8050S ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)