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LP821

Polyfet RF Devices
Part Number LP821
Manufacturer Polyfet RF Devices
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published Mar 22, 2005
Detailed Description polyfet rf devices LP821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet PDF File LP821 PDF File

LP821
LP821

Overview
polyfet rf devices LP821 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 10.
0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.
40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 36 V Drain to Source Voltage 36 V Gate to Source Voltage 20 V 5.
0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 12 55 TYP 10.
0 WATTS OUTPUT ) MAX ...


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