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T508N14

Eupec Power Semiconductors
Part Number T508N14
Manufacturer Eupec Power Semiconductors
Description (T508N12 - T508N18) Phase Control Thyristor
Published Oct 9, 2010
Detailed Description Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor www.DataSheet4U.com T 508 N 12 ....
Datasheet PDF File T508N14 PDF File

T508N14
T508N14

Overview
Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor www.
DataSheet4U.
com T 508 N 12 .
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18 T vj = - 40°C.
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Tvj max N Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages Vorwärts-Stoßspitzensperrspannung non-repetitive peak foward off-state voltage Rückwärts-Stoßspitzensperrspannung non-repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert RMSM on-state current Dauergrenzstrom average on-state current Stoßstrom-Grenzwert surge current Grenzlastintegral I²t-value Kritische Stromsteilheit critical rate of rise of on-state current Kritische Spannungssteilheit critical rate of rise of off-state voltage Charakteristische Werte / Characteristic values Durchlaßspannung on-state voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Durchlaßkennlinie on-state voltage vT = A + B x iT + C x ln (iT + 1) + D x √ iT Zündstrom gate trigger current Zündspannung gate trigger voltage Nicht zündener Steuerstrom gate non-trigger current Nicht zündene Steuerspannung gate non-trigger voltage Haltestrom holding current Einraststrom latching current Vorwärts- und Rückwärts-Sperrstrom forward off-state and reverse currents Zündverzug gate controlled delay time T vj = Tvj max, iT = 1600 A T C = 85 °C VDRM , VRRM VDSM VRSM ITRSMSM ITAVM ITSM I²t (diT/dt)cr 1200 1600 1200 1600 1300 1700 1400 1800 1400 1800 1500 1900 800 508 8000 6900 V V V V V V A A A A 1) T vj = - 40°C.
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Tvj max T vj = + 25°C.
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Tvj max T vj = 25°C, tp = 10 ms T vj = Tvj max, tp = 10 ms T vj = 25°C, tp = 10ms T vj = Tvj max, tp = 10ms DIN IEC 747-6 f=50 Hz, vL = 10V, iGM = 1 A diG/dt = 1 A/µs T vj = Tvj max, vD = 0,67 VDRM 5.
Kennbuchstabe / 5th letter F 320 238 120 3 A²s *10 3 A²s *10 A/µs (dvD/dt)cr 1000 V/µs vT VT(TO) rT A= 0,93854 B= 3,384E-04 C=-5,551E-02 D= 2,001E-02 IGT VGT IGD VGD IH m...


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