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PBSS4032NT

NXP Semiconductors
Part Number PBSS4032NT
Manufacturer NXP Semiconductors
Description 2.6A NPN low VCEsat (BISS) transistor
Published Oct 16, 2010
Detailed Description DataSheet.in PBSS4032NT 30 V, 2.6 A NPN low VCEsat (BISS) transistor Rev. 01 — 18 December 2009 Product data sheet 1. ...
Datasheet PDF File PBSS4032NT PDF File

PBSS4032NT
PBSS4032NT

Overview
DataSheet.
in PBSS4032NT 30 V, 2.
6 A NPN low VCEsat (BISS) transistor Rev.
01 — 18 December 2009 Product data sheet 1.
Product profile 1.
1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
1.
2 Features „ „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
3 Applications „ „ „ „ DC-to-DC conversion Battery-driven devices Power management Charging circuits 1.
4 Quick reference data Table 1.
Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 2.
5 A; IB = 0.
25 A [1] Conditions open base Min - Typ 76 Max 30 2.
6 5 105 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.
02.
DataSheet.
in NXP Semiconductors PBSS4032NT 30 V, 2.
6 A NPN low VCEsat (BISS) transistor 2.
Pinning information Table 2.
Pin 1 2 3 Pinning Description base emitter collector 1 2 2 sym021 Simplified outline 3 Graphic symbol 3 1 3.
Ordering information Table 3.
Ordering information Package Name PBSS4032NT Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4.
Marking Table 4.
Marking codes Marking code[1] *BM Type number PBSS4032NT [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VCBO VCEO VEBO IC ICM IB Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current single pulse; tp ≤ 1...


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