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BUK664R4-55C

NXP
Part Number BUK664R4-55C
Manufacturer NXP
Description N-channel TrenchMOS Intermediate Level FET
Published Oct 16, 2010
Detailed Description DataSheet.in BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev. 1 — 17 August 2010 Objective data sheet 1. P...
Datasheet PDF File BUK664R4-55C PDF File

BUK664R4-55C
BUK664R4-55C

Overview
DataSheet.
in BUK664R4-55C N-channel TrenchMOS intermediate level FET Rev.
1 — 17 August 2010 Objective data sheet 1.
Product profile 1.
1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.
2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications „ 12 V and 24 V automotive systems „ Electric and electro-hydraulic power steering „ Motors, lamps and solenoid control „ Start-Stop micro-hybrid applications „ Transmission control „ Ultra high performance power switching 1.
4 Quick reference data Table 1.
Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Condit...


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