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NDP11N50Z

ON Semiconductor
Part Number NDP11N50Z
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Oct 20, 2010
Detailed Description DataSheet.in NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • Low ON Resistance Low Gate Ch...
Datasheet PDF File NDP11N50Z PDF File

NDP11N50Z
NDP11N50Z

Overview
DataSheet.
in NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.
52 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS 500 V Rating Drain−to−Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 10.
5 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.
3 sec.
, R.
H.
≤ 30%, TA = 25°C) (Figure 14) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS I...


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