DatasheetsPDF.com

SSM9971GD

Silicon Standard
Part Number SSM9971GD
Manufacturer Silicon Standard
Description Dual N-channel Enhancement-mode Power MOSFETs
Published Oct 23, 2010
Detailed Description SSM9971GD Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9971GD ach...
Datasheet PDF File SSM9971GD PDF File

SSM9971GD
SSM9971GD

Overview
SSM9971GD Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM9971GD acheives fast switching performance with low gate charge without a complex drive circuit.
It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.
The SSM2310GD is supplied in an RoHS-compliant PDIP-8 package, which is widely used for medium power commercial and industrial applications, where throughhole insertion into the board is required.
60V 50mΩ 5A Pb-free; RoHS-compliant SO-8 D2 D2 D1 D1 G2 PDIP-8 S1 S2 G1 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current 1,2 3 3 , Value 60 ± 25 T A = 25°C TA = 70°C 5 3.
2 20 2 0.
016 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total power dissipation , TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient 3 Value 62.
5 Units °C/W Notes: 1.
Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.
Pulse width <300us, duty cycle <2%.
3.
Mounted on a square inch of copper pad on FR4 board; 90°C/W when mounted on the minimum pad area required for soldering.
10/16/2005 Rev.
3.
1 www.
SiliconStandard.
com 1 of 5 SSM9971GD ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient (at Tj = 25°C, unless otherwise specified) Test Conditions VGS=0V, ID=250uA Reference to 25°C, ID=1mA VGS=10V, ID=5A VGS=4.
5V, ID=2.
5A Min.
60 1 Typ.
0.
06 7 32.
5 4.
9 8.
8 9.
6 10 30 5.
5 1560 156 110 Max.
Units 50 60 3 1 25 ±100 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Static drain-source on-resistance2 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Forward transcond...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)