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BLL6H0514L-130

NXP Semiconductors
Part Number BLL6H0514L-130
Manufacturer NXP Semiconductors
Description LDMOS driver transistor
Published Oct 23, 2010
Detailed Description DataSheet.in BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. ...
Datasheet PDF File BLL6H0514L-130 PDF File

BLL6H0514L-130
BLL6H0514L-130

Overview
DataSheet.
in BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev.
1 — 9 August 2010 Preliminary data sheet 1.
Product profile 1.
1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.
5 GHz to 1.
4 GHz range.
Table 1.
Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.
Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (μs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 130 130 Gp (dB) 19 17 RLin (dB) 10 10 ηD (%) 54 50 Pdroop(pulse) (dB) 0 0 tr (ns) 15 15 tf (ns) 8 8 1.
2 Features and benefits „ „ „ „ „ „ „ „ Easy power control Integrated ESD protection High flexibility with respect t...


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