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MRF8P20160HR3

Part Number	MRF8P20160HR3
Manufacturer	Motorola Semiconductor Products
Description	RF Power Field Effect Transistors
Published	Oct 23, 2010
Detailed Description	DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect ...
Datasheet	MRF8P20160HR3 PDF File

Overview

DataSheet.
in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev.
1, 7/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz.
Can be used in Class AB and Class C for all typical cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.
6 Vdc, Pout = 37 Watts Avg.
, IQ Magnitude Clipping, Channel Bandwidth = 3.
84 MHz, Input Signal PAR = 9.
9 dB @ 0.
01% Probability on CCDF.
Frequency 1880 MHz 1900 MHz 1920 MHz Gps (dB) 16.
5 16.
6 16.
5 ηD (%) 44.
8 45.
3 45.
8 Output PAR (dB) 7.
0 6.
9 6.
9 A...

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