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07N60S5

Infineon Technologies
Part Number 07N60S5
Manufacturer Infineon Technologies
Description SPI07N60S5
Published Nov 2, 2010
Detailed Description Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultr...
Datasheet PDF File 07N60S5 PDF File

07N60S5
07N60S5


Overview
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) ID 600 V 0.
6 Ω 7.
3 A PG-TO262 PG-TO220 2 P-TO220-3-1 123 Type SPP07N60S5 SPI07N60S5 Package PG-TO220 PG-TO262 Ordering Code Q67040-S4172 Q67040-S4328 Marking 07N60S5 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = - A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.
3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage Gate source voltage AC (f >1Hz) VGS VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 7.
3 4.
6 14.
6 230 0.
5 7.
3 ...


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