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FTD2017M

Sanyo Semicon Device
Part Number FTD2017M
Manufacturer Sanyo Semicon Device
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Published Nov 4, 2010
Detailed Description Ordering number : ENA1176 FTD2017M SANYO Semiconductors DATA SHEET FTD2017M Features • • • • • N-Channel Silicon MO...
Datasheet PDF File FTD2017M PDF File

FTD2017M
FTD2017M

Overview
Ordering number : ENA1176 FTD2017M SANYO Semiconductors DATA SHEET FTD2017M Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance.
2.
5V drive.
Mount height 1.
1mm.
Composite type, facilitating high-density mounting.
Drain common specifications.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm 2✕0.
8mm) 1unit When mounted on ceramic substrate (1000mm 2✕0.
8mm) Conditions Ratings 20 ±12 6 40 1.
2 1.
25 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS...


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