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IRF7853PBF

Part Number	IRF7853PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Nov 5, 2010
Detailed Description	PD - 97069 IRF7853PbF HEXFET® Power MOSFET Applications Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in U...
Datasheet	IRF7853PBF PDF File

Overview

PD - 97069 IRF7853PbF HEXFET® Power MOSFET Applications Primary Side Switch in Bridge Topology VDSS RDS(on) max ID in Universal Input (36-75Vin) Isolated 100V 18m:@VGS = 10V 8.
3A DC-DC Converters l Primary Side Switch in Push-Pull Topology for 18-36Vin Isolated DC-DC A Converters A 1 8 D S l Secondary Side Synchronous 2 7 Rectification Switch for 15Vout S D l Suitable for 48V Non-Isolated 3 6 S D Synchronous Buck DC-DC Applications 4 5 G D Benefits l Low Gate to Drain Charge to Reduce SO-8 Top View Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings l Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max.
100 ± 20 8.
3 6.
6 66 2.
5 0.
02 5.
1 -55 to + 150 Units V A c Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and W W/°C V/ns °C h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ.
Max.
20 50 Units °C/W ei ––– ––– Notes through are on page 8 www.
irf.
com 1 1/5/06 www.
DataSheet.
in IRF7853PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units 100 ––– ––– 3.
0 ––– ––– ––– ––– ––– 0.
11 14.
4 ––– ––– ––– ––– ––– ––– ––– 18 4.
9 20 250 100 -100 nA V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 8.
3A V/°C Reference to 25°C, ID = 1mA f VDS = VGS, ID = 100µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V ...

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IRF7853PBF HEXFET Power MOSFET - International Rectifier

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