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IRF7854PBF

Part Number	IRF7854PBF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Nov 5, 2010
Detailed Description	PD - 97172 IRF7854PbF Applications l Primary Side Switch in Bridge or twoswitch forward topologies using 48V (±10%) or ...
Datasheet	IRF7854PBF PDF File

Overview

PD - 97172 IRF7854PbF Applications l Primary Side Switch in Bridge or twoswitch forward topologies using 48V (±10%) or 36V to 60V ETSI range inputs.
l Secondary Side Synchronous Rectification Switch for 12Vout l Suitable for 48V Non-Isolated Synchronous Buck DC-DC Applications Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS 80V RDS(on) max 13.
4m:@VGS = 10V ID 10A S S S G 1 2 3 4 8 7 A A D D D D 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Operating Junction and Max.
80 ± 20 10 7.
9 79 2.
5 0.
02 11 -55 to + 150 Units V A c W W/°C V/ns °C h Storage Temperature Range Thermal Resistance Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient (PCB Mount) Typ.
Max.
20 50 Units °C/W ei ––– ––– Notes through are on page 8 www.
irf.
com 1 01/05/06 www.
DataSheet.
in IRF7854PbF Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units 80 ––– ––– 3.
0 ––– ––– ––– ––– ––– 0.
095 11 ––– ––– ––– ––– ––– ––– ––– 13.
4 4.
9 20 250 100 -100 nA V mΩ V µA Conditions VGS = 0V, ID = 250µA VGS = 10V, ID = 10A VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V V/°C Reference to 25°C, ID = 1mA VDS = VGS, ID = 100µA f Dynamic @ TJ = 25°C (unless otherwise specified) ...

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IRF7854PBF HEXFET Power MOSFET - International Rectifier

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