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IXFN56N90P

IXYS Corporation
Part Number IXFN56N90P
Manufacturer IXYS Corporation
Description Power MOSFET
Published Nov 7, 2010
Detailed Description PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN56N90P Symbol ...
Datasheet PDF File IXFN56N90P PDF File

IXFN56N90P
IXFN56N90P

Overview
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN56N90P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 1.
6mm (0.
062 in.
) from case for 10s 50/60 Hz, RMS IISOL  1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings 900 V 900 V  30 V  40 V 56 A 168 A 28 A 2 J 20 1000 -55 .
.
.
+150 150 -55 .
.
.
+150 300 V/ns W C C C C 2500 3000 1.
5/13 1.
3/11.
5 30 V~ V~ Nm/lb.
in.
Nm/lb.
in.
g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
900 V 3.
5 6.
5 V  200 nA 50 A 5 mA 145 m VDSS = ID25 =  RDS(on) trr  900V 56A 145m 300ns miniBLOC E153432 S G G = Gate S = Source S D D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Features  International Standard Package  miniBLOC, with Aluminium Nitride Isolation  Low RDS(on) and QG  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Laser Drivers  AC and DC Motor Drives  Robotics and Servo Controls © 2014 IXYS CORPORATION, All Rights Reserved DS100066B(01/14) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.
5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
5 • VDSS, ID...


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