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IXFR18N90P

IXYS Corporation
Part Number IXFR18N90P
Manufacturer IXYS Corporation
Description Power MOSFET
Published Nov 7, 2010
Detailed Description Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intri...
Datasheet PDF File IXFR18N90P PDF File

IXFR18N90P
IXFR18N90P

Overview
Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR18N90P VDSS ID25 RDS(on) trr = = ≤ ≤ 900V 10.
5A 660mΩ 300ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 900 900 ± 30 ± 40 10.
5 36 9 800 15 200 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ V/ns W °C °C °C °C °C V~ N/lb.
g ISOPLUS247 E153432 Isolated Tab G = Gate S = Source D = Drain Fearures z z z z z z Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20.
.
120/4.
5.
.
27 5 Silicon chip on Direct-Copper Bond (DCB) substrate Isolated mounting surface 2500V electrical isolation Fast intrinsic diode Avalanche rated Low package ...


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