DatasheetsPDF.com

RJE0609JPD

Part Number	RJE0609JPD
Manufacturer	Renesas Technology
Description	P-Channel MOSFET
Published	Nov 8, 2010
Detailed Description	Preliminary Datasheet RJE0609JPD Silicon P Channel MOS FET Series Power Switching Description This FET has the over tem...
Datasheet	RJE0609JPD PDF File

Overview

Preliminary Datasheet RJE0609JPD Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
REJ03G1908-0100 Rev.
1.
00 Apr 01, 2010 Features       Logic level operation (–6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the curren...

Similar Datasheet

RJE0609JPD P-Channel MOSFET - Renesas Technology

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)