DatasheetsPDF.com

RJE0616JSP

Renesas Technology
Part Number RJE0616JSP
Manufacturer Renesas Technology
Description P-Channel MOSFET
Published Nov 8, 2010
Detailed Description RJE0616JSP -60V, -4A Silicon P Channel Thermal FET Power Switching Preliminary Datasheet R07DS1234EJ0200 (Previous: REJ...
Datasheet PDF File RJE0616JSP PDF File

RJE0616JSP
RJE0616JSP

Overview
RJE0616JSP -60V, -4A Silicon P Channel Thermal FET Power Switching Preliminary Datasheet R07DS1234EJ0200 (Previous: REJ03G1944-0100) Rev.
2.
00 Oct 27, 2014 Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
Features • For Automotive applications • Built-in the over temperature shut-down circuit.
• High endurance capability against to the short circuit.
• Latch type shut down operation (need 0 voltage recovery).
• Built-in the current limitation circuit.
• Low on-resistance RDS(on) : 77 mΩ Typ, 90 mΩ Max (VGS = –10 V) • High density mounting • AEC-Q101 compliant Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8 7 65 1 234 4 G Gate Resistor Current Limitation Circuit Temperature Sensin...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)