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RJK0212DPA

Part Number	RJK0212DPA
Manufacturer	Renesas Technology
Description	N-Channel MOSFET
Published	Nov 8, 2010
Detailed Description	Preliminary Datasheet RJK0212DPA Silicon N Channel Power MOS FET Power Switching Features Very high speed switching Cap...
Datasheet	RJK0212DPA PDF File

Overview

Preliminary Datasheet RJK0212DPA Silicon N Channel Power MOS FET Power Switching Features Very high speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1950-0011 Rev.
0.
11 Jul 02, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to c...

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RJK0212DPA N-Channel MOSFET - Renesas Technology

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