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IRF7755GPBF

Part Number	IRF7755GPBF
Manufacturer	International Rectifier
Description	Power MOSFET
Published	Nov 9, 2010
Detailed Description	PD- 96150A IRF7755GPbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOI...
Datasheet	IRF7755GPBF PDF File

Overview

PD- 96150A IRF7755GPbF HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.
2mm) Available in Tape & Reel Lead-Free Halogen-Free VDSS -20V RDS(on) max 51mΩ@VGS = -4.
5V 86mΩ@VGS = -2.
5V ID -3.
7A -2.
8A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner ' ! " # Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB & % $ 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.
2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.
5V Continuous Drain Current, VGS @ -4.
5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
-20 -3.
9 -3.
1 -15 1 0.
64 0.
01 ±20 -55 to +150 Units V A W W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Max.
125 Units °C/W www.
irf.
com 05/14/09 1 www.
DataSheet.
in IRF7755GPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Sour...

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IRF7755GPBF Power MOSFET - International Rectifier

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