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LPD200SOT343

Filtronic Compound Semiconductors
Part Number LPD200SOT343
Manufacturer Filtronic Compound Semiconductors
Description PACKAGED HIGH DYNAMIC RANGE PHEMT
Published Mar 22, 2005
Detailed Description PRELIMINARY DATA SHEET LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 0.6 dB Noise Figure at 2 GHz ♦ 15.5...
Datasheet PDF File LPD200SOT343 PDF File

LPD200SOT343
LPD200SOT343

Overview
PRELIMINARY DATA SHEET LPD200SOT343 PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 0.
6 dB Noise Figure at 2 GHz ♦ 15.
5 dBm P-1dB 2 GHz, 16.
5 dBm at 6 GHz ♦ 21 dB Power Gain at 2 GHz, 10.
5 dB at 6GHz ♦ 50% Power-Added-Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µm by 200 µm Schottky barrier gate.
The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for high dynamic range.
The LPD200’s active a...


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