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BF9024SPD-M

BYD
Part Number BF9024SPD-M
Manufacturer BYD
Description P-Channel MOSFET and Schottky Diode
Published Nov 25, 2010
Detailed Description BF9024SPD-M BYD Microelectronics Co., Ltd P-Channel MOSFET and Schottky Diode General Description The BF9024SPD-M uses...
Datasheet PDF File BF9024SPD-M PDF File

BF9024SPD-M
BF9024SPD-M

Overview
BF9024SPD-M BYD Microelectronics Co.
, Ltd P-Channel MOSFET and Schottky Diode General Description The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge.
This device is suitable for used as a load switch or in PWM applications.
8 7 6 5 Features MOSFET z z z VDS (V) = -20V ID = -2.
7A Low on-state resistance RDS (on) < 90mΩ .
(VGS = -4.
5V) RDS (on) < 120mΩ .
(VGS = -2.
5V) VF=0.
42V K D 1 2 3 4 1,2 Anode; 3 Source; 4 Gate 5,6 Drain; 7,8 Kathode K: Kathode;D: Drain Schottky Diode z Absolute Maximum Ratings (Ta = 25℃) Parameter Mosfet Drain to Source Voltage (MOSFET and Schottky) Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Maximun Power Dissipation Channel Temperature Storage Temperature Schottky Diode Reverse Voltage Average Forward Current Pulsed Forward Current Maximun Power Dissipation Storage Temperature a a Symbol Ratings Unit VDSS VGSS ID(DC) ID(pulse) PD Tch Tstg VKA IF IFM PD Tstg -20 ±8 -2.
7 -10 1.
1 150 -55~+150 20 1 7 0.
96 -55~+150 V V A A W ℃ ℃ V A A W ℃ Note a.
Mounted on FR4 Board of 1”x1”.
Caution: These values must not be exceeded under any conditions.
Ordering Information z z BF9024SPD-M DFNWB3*1.
8-8L ES-BYD-WDZCE03D-070 Rev.
A/1 Page 1of 6 Datasheet www.
DataSheet.
in BYD Microelectronics Co.
, Ltd.
BF9024SPD-M Electrical Characteristics (TC = 25℃) Characteristic Mosfet Symbol IDSS IGSS VGS(th) |yfs| RDS(on) Ciss Coss Crss Test Conditions VDS= -20V,VGS=0V VGS= ± 8V,VDS=0V VDS=VGS,ID= - 0.
25mA VDS= -10V, ID= -2A VGS= -4.
5V,ID= -2A VGS= -2.
5V,ID= -2A VDS= -10V ,VGS =0,f=1MHZ VDS= -10V, ID= -1A, VGS= -4.
5V, RG=6Ω VDS= -10V, VGS= -4.
5V, ID= -2A IF=-0.
9A,VGS=0V IF=0.
5A Vr=20V Vr=10V Min.
— Typ.
— Max.
-1 ±100 -1 — Unit µA nA V S mΩ mΩ pF pF pF Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise...


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