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WTPB16A60SW

Part Number	WTPB16A60SW
Manufacturer	WINSEMI SEMICONDUCTOR
Description	Sensitive Gate Bi-Directional Triode Thyristor
Published	Nov 25, 2010
Detailed Description	www.DataSheet.in WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Volta...
Datasheet	WTPB16A60SW PDF File

Overview

www.
DataSheet.
in WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.
M.
S On-State Current(IT(RMS)=16A ■ Low on-state voltage: VTM=1.
55V(Max.
)@ IT=22.
5A ■ High Commutation dV/dt.
General Description General purpose swiTJhing and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified) Symbol VDRM /VPRM IT(RMS) ITSM I2t PGM PG(AV) dI/dt IFGM VRGM TJ, Tstg Para...

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WTPB16A60SW Sensitive Gate Bi-Directional Triode Thyristor - WINSEMI SEMICONDUCTOR

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