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WTPB4A60SW

WINSEMI SEMICONDUCTOR
Part Number WTPB4A60SW
Manufacturer WINSEMI SEMICONDUCTOR
Description Bi-Directional Triode Thyristor
Published Nov 25, 2010
Detailed Description www.DataSheet.in 4A60 SW WTPB WTPB4 60SW Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State ...
Datasheet PDF File WTPB4A60SW PDF File

WTPB4A60SW
WTPB4A60SW

Overview
www.
DataSheet.
in 4A60 SW WTPB WTPB4 60SW Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.
M.
S On-State Current ( IT(RMS)= 4 A ) Low On-State Voltage (1.
6V(Typ.
) @ ITM) High Commutation dv/dt High Junction temperature(TJ=150℃) General Description Standard gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings (T = J 25°C unless otherwise specified) Symbol VDRM /VRRM IT(RMS) ITSM 2 Parameter Repetitive Peak Off-State Voltage R.
M.
S On-State Current Surge On-State Current TJ = 110 °C Condition Ratings Units 600 4.
0 50Hz 60Hz 30 A 31 5.
1 5 A2 s W W A V ℃ ℃ V A One cycle, Peak value, nonrepetitive full cycle It PGM PG(AV) IGM VGM TJ TSTG I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature TJ = 125 °C TJ = 125 °C 1 4.
0 7.
0 -40~+150 -40~+150 Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case(DC) Thermal Resistance Junction to Ambient(DC) Value 2.
6 60 Units ℃/W ℃/W Jan 2009.
Rev.
0 Copyright @WinSemi Semiconductor Co.
,Ltd.
,All rights reserved.
T02-1 www.
DataSheet.
in 4A60 SW WTPB TPB4 60SW Electrical Characteristics (TC=25℃ Symbol IDRM/IRRM unless otherwise noted) Characteristics off-state leakage current (VAK= VDRM/VRRM Single phase, half wave) Forward “On” voltage (IT=5A, Inst.
Measurement) Gate trigger current (continuous dc) (VAK = 6 Vdc, RL = 10 Ω) Note:1 T2+,G+ T2+,GT2-,GT2+,G+ T2+,GNote:1 Gate threshold Voltage T2-,GTJ=125℃ TJ=25℃ TJ=125 ℃ Min 0.
2 Typ.
1.
2 - Max 5 1 1.
6 35 35 35 1.
5 1.
5 1.
5 - Unit μA mA V VTM IGT mA VGT Gate Trigger Voltage (Continuous dc) ) (VAK = 6 Vdc, RL = 10 Ω) V VGD ＶＤ=1/2VDRM, RL = 3.
3K Ω Critical Rate of Rise of Off-State Voltage at V dv...


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