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WTF4A60

Part Number	WTF4A60
Manufacturer	WINSEMI SEMICONDUCTOR
Description	Bi-Directional Triode Thyristor
Published	Nov 25, 2010
Detailed Description	www.DataSheet.in WTF4A60 Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V...
Datasheet	WTF4A60 PDF File

Overview

www.
DataSheet.
in WTF4A60 Bi-Directional Triode Thyristor Features ◆ ◆ ◆ ◆ ◆ ◆ Repetitive Peak Off-State Voltage : 600V R.
M.
S On-State Current ( IT(RMS)= 4 A ) Low On-State Voltage (1.
6V(Typ.
) @ ITM) High Commutation dv/dt Isolation Voltage ( VISO = 1500V AC ) High Junction temperature(TJ=150℃) General Description Standard gate triggering Triac is suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment.
A1 A2 G TO220F Absolute Maximum Ratings (T = J 25°C unless otherwise specified) Symbol VDRM /VRRM IT(RMS) ITSM 2 Parame Repetitive Peak ter Off-State Voltage R.
M.
S On-State Current Surge On-State Current TJ = 105 °C Condition Ratings Units 600 4.
0 50Hz 60Hz 30 A 31 5.
1 5 A2 s W W A V ℃ ℃ V A One cycle, Peak value, non-repetitive full cycle It PGM PG(AV) IGM VGM TJ TSTG I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature TJ = 125 °C TJ = 125 °C 1 4.
0 7.
0 -40~+150 -40~+150 Thermal Characteristics Symbol RθJc RθJA Parameter Value 4 60 Units ℃/W ℃/W Thermal Resistance Junction to Case(DC) Thermal Resistance Junction to Ambient(DC) Jan 2009.
Rev.
0 Copyright @WinSemi Semiconductor Co.
,Ltd.
,All rights reserved.
T02-1 www.
DataSheet.
in 4A60 WTF TF4 Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol IDRM/IRRM Characteristics off-state leakage current (VAK= VDRM/VRRM Single phase, half wave) Forward “On” voltage (IT=5A, Inst.
Measurement) Gate trigger current (continuous dc) (VAK = 6 Vdc, RL = 10 Ω) Note:1 T2+,G+ T2+,GT2-,GT2+,G+ T2+,GNote:1 Gate threshold Voltage T2-,GTJ=125℃ TJ=25℃ TJ=125℃ Min 0.
2 Typ.
1.
2 - Max 5 1 1.
6 35 35 35 1.
5 1.
5 1.
5 - Unit μA mA V VTM IGT mA VGT Gate Trigger Voltage (Continuous dc) ) (VAK = 6 Vdc, RL = 10 Ω) V VGD ＶＤ=1/2VDRM, RL = 3.
3K Ω Critical Rate of Rise...

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WTF4A60 Bi-Directional Triode Thyristor - WINSEMI SEMICONDUCTOR

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