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WTD882

Weitron Technology
Part Number WTD882
Manufacturer Weitron Technology
Description (WTD772 / WTD882) PNP/NPN Epitaxial Planar Transistors
Published Nov 25, 2010
Detailed Description WTD772 WTD882 PNP/NPN Epitaxial Planar Transistors P b Lead(Pb)-Free TO-252/D-PAK 1. BASE 2. COLLECTOR 3. EMITTER 1 ...
Datasheet PDF File WTD882 PDF File

WTD882
WTD882

Overview
WTD772 WTD882 PNP/NPN Epitaxial Planar Transistors P b Lead(Pb)-Free TO-252/D-PAK 1.
BASE 2.
COLLECTOR 3.
EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e Voltage Collector Current (DC) Collector Current (P uls e) B as e Current Total Device Dis s ipation Tc=2 5° C TA =2 5° C J unction Tem perature S torage, Tem perature (1 ) Symbol V CE O V CB O VE B O I C(DC) IC (P uls e) I B (P uls e) PD Tj Ts tg PNP/WTD772 NPN/WTD882 30 -3 0 -4 0 40 -5 .
0 5.
0 3.
0 -3 .
0 -7 .
0 -0 .
6 10 1.
4 150 -5 5 to +1 5 0 7.
0 0.
6 Unit Vdc Vdc Vdc Adc Adc Adc W C C Device Marking WT D7 7 2 =B 7 7 2 , WT D8 8 2 =D8 8 2 ELECTRICAL CHARACTERISTICS Characteristics Collector-E m itter B reakdown Voltage (I C = -1 0 / 1 0 m Adc, I B =0 ) Collector-B as e B reakdown Voltage (I C = -1 0 0 / 1 0 0 µAdc, I E =0 ) E m itter-B as e B reakdown Voltage (I E = -1 0 0 / 1 0 0 µAdc, I C =0 ) Collector Cutoff Current (V CE = -3 0 / 3 0 Vdc, I B =0 ) Collector Cutoff Current (V CB = -4 0 / 4 0 Vdc, I E =0 ) E m itter Cutoff Current (V E B = -6 .
0 / 6 .
0 V d c, I C =0 ) N OT E : 1 .
P W 3 5 0 us , duty cycle 2 % Symbol Min Max -1 .
0 / 1 .
0 -1 .
0 / 1 .
0 -1 .
0 / 1 .
0 Unit Vdc Vdc Vdc uAdc uAdc uAdc V (B R )CE O -3 0 / 3 0 V (B R )CB O -4 0 / 4 0 V (B R )E B O -5 .
0 / 5 .
0 I CE 0 I CB O IE B O - WEITRON http://www.
weitron.
com.
tw www.
DataSheet.
in WTD772 WTD882 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -1.
0/1.
0 Adc, VCE=-2.
0/2.
0Vdc) DC Current Gain (IC= -100/100 mAdc, VCE= -2.
0/2.
0 Vdc) Collector-Emitter Saturation Voltage (IC= -2.
0/2.
0 Adc, IB= -0.
2/0.
2mAdc) Base-Emitter Saturation Voltage (IC= -2.
0/2.
0 Adc, IB= -0.
2/0.
2mAdc) Current-Gain-Bandwidth Product (IC= -0.
1/0.
1 mAdc, VCE=-5.
0/5.
0 Vdc, f=10MHz) hFE (1) hFE (2) VCE(sat) VBE(sat) fT 60 32 - - 400 -0.
5/0.
5 -2.
0/2.
0 Vdc Vdc 80/90 - MHz Classifi...


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