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WSP10D100

Part Number	WSP10D100
Manufacturer	WINSEMI SEMICONDUCTOR
Description	Power Schottky Rectifier
Published	Nov 25, 2010
Detailed Description	WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.60V(@TJ=125℃) ■ Low power loss, high efficienc...
Datasheet	WSP10D100 PDF File

Overview

WSP10D100 Power Schottky Rectifier Features ■ 10A(1×5A),100V ■ VF(max)=0.
60V(@TJ=125℃) ■ Low power loss, high efficiency ■ Common cathode structure ■ Guard ring for over voltage protection, High reliability ■ Maximum Junction Temperature Range(175℃) K General Description Dual center tap Schottky rectifiers suited for High frequency switch power supply and Free wheeling diodes, polarity protection applications.
A1 K A2 TO220 Absolute Maximum Ratings Symbol VDRM VDC IF(RMS) IF(AV) IFSM IRRM dv/dt TJ, Tstg Parameter Repetitive peak reverse voltage Maximum DC blocking voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Critical rate of rise of reverse voltage Junction Temperature Storage Temperature per diode per device Value 100 100 10 5 10 150 1 10000 175 -40~150 Units V V A A A A V/ns ℃ ℃ Thermal Characteristics Symbol RQJC RQCS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Value Min 0.
3 Typ - Max 1.
3 - Units ℃/W ℃/W Rev.
C Nov.
2008 Copyright@WinSemi Semiconductor Co.
,Ltd.
,All rights reserved.
T02-2 www.
DataSheet.
in WSP10D100 Electrical Characteristics (per diode) Characteristics Reverse leakage current Symbol IR Test Condition VR = VRRM Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min - Typ.
- Max 10 5 0.
75 0.
60 0.
85 0.
7 Unit μA mA IF= 5A Forward voltage drop VF IF= 210A Note :tp = 380 μs, δ < 2% - 0.
71 0.
56 0.
78 0.
65 V 2/4 Copyright@WinSemi Semiconductor Co.
,Ltd.
,All rights reserved.
www.
DataSheet.
in WSP10D100 Fig.
1 Forward voltage drop versus forward current (maximum values, per diode).
Fig.
2 Average current versus ambient temperature (d=0.
5) (per diode) Fig.
3 Junction capacitance versus reverse voltage applied (typical values, per diode).
Fig.
4 Reverse leakage current versus reverse voltage applied (typical values, per diode).
.
3/4 Copyright@WinSemi Semiconductor Co.
,Ltd.
,All rights reserved.
www.
DataSheet.
in ...

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WSP10D100 Power Schottky Rectifier - WINSEMI SEMICONDUCTOR

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