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WGW15G120

WINSEMI SEMICONDUCTOR
Part Number WGW15G120
Manufacturer WINSEMI SEMICONDUCTOR
Description Low Loss IGBT
Published Nov 25, 2010
Detailed Description WGW15G120 Low Loss IGBT Features „ „ „ „ „ 15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=25℃ low Gate charge(Typ.= 85nC) NPT...
Datasheet PDF File WGW15G120 PDF File

WGW15G120
WGW15G120

Overview
WGW15G120 Low Loss IGBT Features „ „ „ „ „ 15A,1200V,VCE(sat)(Typ.
=2.
4v)@IC=15A & Tc=25℃ low Gate charge(Typ.
= 85nC) NPT Technology, Positive temperature coefficient Low EMI Pb-free lead plating; RoHS compliant Applications ‹ ‹ ‹ ‹ General purpose inverter Frequency converters Induction Heating(IH) Uninterrupted Power Supply(UPS) G C E TO3P(N) Absolute Maximum Ratings(Tc=25℃) Symbol VCES IC ICP VGES tSC Collector-Emitter Voltage DC Collector Current Collector pulse Current Gate-Emitter Voltage Short circuit withstand time Turn-off safe area PD TJ TSTG TL Total Dissipation Operation Junction Temperature Storage Temperature Maximum Lead Temperature for Soldering Purposes VGE=10V,VCE≤1200V,T...


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