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WFY3N02

WINSEMI SEMICONDUCTOR
Part Number WFY3N02
Manufacturer WINSEMI SEMICONDUCTOR
Description 20V N-Channel MOSFET
Published Nov 25, 2010
Detailed Description WFY3N02 20V N−Channel MOSFET Features ■ 2.8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.5V ■ 1.2 V Rated for Low Voltage Gate Drive...
Datasheet PDF File WFY3N02 PDF File

WFY3N02
WFY3N02

Overview
WFY3N02 20V N−Channel MOSFET Features ■ 2.
8A, 20V, RDS(on)(Max 65mΩ)@VGS=-4.
5V ■ 1.
2 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for Load switching and PA switching.
G S D SOT-23 Marking: H04F Absolute Maximum Ratings(Tc=25℃ unless otherwise noted) Symbol VDSS ID IDM PD VGS ESD TJ, Tstg TL Drain Source Voltage Continuous Drain Current Drain Current Pulsed Total...


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