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WFW18N50

WINSEMI SEMICONDUCTOR
Part Number WFW18N50
Manufacturer WINSEMI SEMICONDUCTOR
Description Silicon N-Channel MOSFET
Published Nov 25, 2010
Detailed Description WFW18N50 Silicon N-Channel MOSFET Features „ „ „ „ „ 18A,500V,RDS(on)(Max0.265Ω)@VGS=10V Ultra-low Gate charge(Typical 4...
Datasheet PDF File WFW18N50 PDF File

WFW18N50
WFW18N50

Overview
WFW18N50 Silicon N-Channel MOSFET Features „ „ „ „ „ 18A,500V,RDS(on)(Max0.
265Ω)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Junction and Storage T...


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