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PDMB400B12

Nihon Inter Electronics Corporation
Part Number PDMB400B12
Manufacturer Nihon Inter Electronics Corporation
Description IGBT
Published Nov 26, 2010
Detailed Description IGBT MODULE CIRCUIT Dual 400A 1200V OUTLINE DRAWING PDMB400B12 4- fasten- tab No 110 Dimension(mm) Approximate Weigh...
Datasheet PDF File PDMB400B12 PDF File

PDMB400B12
PDMB400B12

Overview
IGBT MODULE CIRCUIT Dual 400A 1200V OUTLINE DRAWING PDMB400B12 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB400B12 1200 +/ - 20 400 800 1900 -40 to +150 -40 to +125 2500 3 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.
) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=400A,VGE=15V VCE=5V,IC=400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 1.
5 ohm RG= 1.
0 ohm VGE= +/- 15V Min.
4.
0 - Typ.
1.
9 33000 0.
25 0.
40 0.
25 0.
80 Max.
8.
0 1.
0 2.
4 8.
0 0.
45 0.
70 0.
35 1.
10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 400 800 Unit A Typ.
1.
9 0.
20 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=400A,VGE=0V IF=400A,VGE=-10V,di/dt=800A/µs Min.
- Max.
2.
4 0.
30 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min.
- Typ.
- Max.
0.
065 0.
12 www.
DataSheet.
in PDMB400B12 Fig.
1- Output Characteristics (Typical) 800 Fig.
2- Collector to Emitter On Voltage vs.
Gate to Emitter Voltage (Typical) TC=25 ℃ 16 TC=25 ℃ IC=200A 800A VGE =20V 15V 12V 10V Collector to Emitter Voltage V CE (V) 14 12 10 8 6 4 2 0 400A Collector Current I C (A) 600 9V 400 8V 200 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collect...


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